1 FML12N60ES fuji power mosfet n-channel silicon power mosfet features maintains both low power loss and low noise lower r ds (on) characteristic more controllable switching dv/dt by gate resistance smaller v gs ringing waveform during switching narrow band of the gate threshold voltage (4.20.5v) high avalanche durability applications switching regulators ups (uninterruptible power supply) dc-dc converters maximum ratings and characteristics absolute maximum ratings at tc=25 c (unless otherwise specifed) description symbol characteristics unit remarks drain-source voltage v ds 600 v v dsx 600 v v gs = -30v continuous drain current i d 12 a pulsed drain current i dp 48 a gate-source voltage v gs 30 v repetitive and non-repetitive maximum avalanche current i ar 12 a note*1 non-repetitive maximum avalanche energy e as 384 mj note*2 repetitive maximum avalanche energy e ar 18 mj note*3 peak diode recovery dv/dt dv/dt 4.4 kv/s note*4 peak diode recovery -di/dt -di/dt 100 a/s note*5 maximum power dissipation p d 1.44 w ta=25c 180 tc=25c operating and storage temperature range t ch 150 c t stg -55 to +150 c outline drawings [mm] equivalent circuit schematic electrical characteristics at tc=25c (unless otherwise specifed) description symbol conditions min. typ. max. unit drain-source breakdown voltage bv dss i d =250a, v gs =0v 600 - - v gate threshold voltage v gs (th) i d =250a, v ds =v gs 3.7 4.2 4.7 v zero gate voltage drain current i dss v ds =600v, v gs =0v t ch =25c - - 25 a v ds =480v, v gs =0v t ch =125c - - 250 gate-source leakage current i gss v gs =30v, v ds =0v - 10 100 na drain-source on-state resistance r ds (on) i d =6a, v gs =10v - 0.641 0.75 ? forward transconductance g fs i d =6a, v ds =25v 4 8 - s input capacitance ciss v ds =25v v gs =0v f=1mhz - 1300 1950 pf output capacitance coss - 150 225 reverse transfer capacitance crss - 8.5 13 turn-on time td(on) v cc =300v v gs =10v i d =6a r g =27? - 40 60 ns tr - 40 60 turn-off time td(off) - 74 111 tf - 19 29 total gate charge q g v cc =300v i d =12a v gs =10v - 37 56 nc gate-source charge q gs - 15 23 drain-source crossover charge q sw - 6.5 10 gate-drain charge q gd - 12 18 avalanche capability i av l=2.64mh, t ch =25c 12 - - a diode forward on-voltage v sd i f =12a, v gs =0v, t ch =25c - 0.86 1.30 v reverse recovery time trr i f =12a, v gs =0v -di/dt=100a/s, tch=25c - 0.52 - s reverse recovery charge qrr - 5.5 - c 1 2 4 3 d s 2 g s 1 tfp super fap-e 3 series http://www.fujisemi.com 0 . 4 0 . 1 9 . 0 0 . 2 7 . 0 0 . 2 2 . 0 2 . 5 2 . 0 1 . 5 1 . 0 0 . 2 1 . 0 0 . 2 3 . 6 0 . 2 ( 4 . 0 ) ( 0 . 8 ) ( 3 . 2 ) 0 . 5 0 . 2 0 . 6 0 . 2 0 . 1 0 . 5 9 . 0 0 . 2 1 0 . 1 0 . 3 0 . 4 0 . 1 2 . 8 0 . 2 1 2 3 s o l de r p l a t i n g ( 2 . 2 ) ( 2 . 1 ) ( 5 . 8 ) ( 1 0 . 1 ) 4 note *1 : tch150c note *2 : stating tch=25c, i as =5a, l=33.8mh, vcc=50v, r g =10?, e as limited by maximum channel temperature and avalanche current. note *3 : repetitive rating : pulse width limited by maximum channel temperature. thermal characteristics description symbol test conditions min. typ. max. unit thermal resistance rth (ch-c) channel to case 0.69 c/w rth (ch-a) channel to ambient 87 c/w rth (ch-a) channel to ambient note*6 52 c/w note *4 : i f -i d , -di/dt=100a/s, vccbv dss , tch150c. note *5 : i f -i d , dv/dt=6.3kv/s, vccbv dss , tch150c. note *6 : surface mounted on 1000mm 2 , t=1.6mm fr-4 pcb (drain pad area : 500mm 2 )
2 FML12N60ES 3 fuji power mosfet http://www.fujisemi.com 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 0 2 0 4 0 6 0 8 0 10 0 12 0 14 0 16 0 18 0 20 0 a ll o w a b l e p o w e r d i s s i p a t i o n p d = f ( t c ) pd [w] tc [?c] 1 0 - 1 1 0 0 1 0 1 1 0 2 1 0 3 1 0 - 2 1 0 - 1 1 0 0 1 0 1 1 0 2 t p d p o w e r l o s s w a v e f o r m : s q u a r e w a v e f o r m t p d t p d p o w e r l o s s w a v e f o r m : s q u a r e w a v e f o r m id [a] v d s [ v ] safe operating area i d =f(v ds ):duty=0(singlepulse), tc=25c t = 1 s 1 0 s 1 m s 1 0 0 s 0 4 8 1 2 1 6 2 0 2 4 0 5 1 0 1 5 2 0 2 5 7 . 5 v 6 . 5 v v g s = 6 . 0 v id [a] v d s [ v ] t y p i c a l o u t pu t c h a r a c t e r i s t i c s id=f(vds):80s pulse test, tch=25?c 1 0 v 7 . 0 v 8 . 0 v 0 2 4 6 8 1 0 1 2 0 . 1 1 1 0 10 0 id [a] vgs [v] t y p i c a l t r a n s f e r c ha r a c t e r i s t i c id=f(vgs):80 s pulse test, vds=25v, tch=25?c 0 . 1 1 1 0 10 0 0 . 1 1 1 0 10 0 gfs [s] id [a] t y p i c a l t r a n s c o n d u c t an c e gfs=f(id):80s pulse test, vds=25v, tch=25?c 0 5 1 0 1 5 2 0 0 . 5 0 . 6 0 . 7 0 . 8 0 . 9 1 . 0 1 . 1 1 . 2 1 . 3 6 . 5 v rds(on) [?] i d [ a ] t y p i c a l d r ai n - so u r c e on -s t a t e r e s i s t an c e rds(on)=f(id):80s pulse test, tch=25?c 10 v 8 v 20 v 7 v v g s = 6 . 0 v
2 3 fuji power mosfet FML12N60ES http://www.fujisemi.com - 5 0 - 2 5 0 2 5 5 0 7 5 10 0 1 2 5 15 0 0 . 0 0 . 5 1 . 0 1 . 5 2 . 0 2 . 5 r d s ( o n) [ ? ] t c h [ ? c ] t y p . m a x . d rai n - s ou r c e o n - s t at e r esi s ta n c e rds (o n ) = f( t c h ): i d = 6 a , v g s = 10 v - 5 0 - 2 5 0 2 5 5 0 7 5 1 0 0 12 5 1 5 0 0 1 2 3 4 5 6 7 8 t y p . m a x . m i n . g a t e t hr es h o l d vo l t a g e v s . t c h vgs(th)=f(tch):vds=vgs, id=250a v g s ( t h ) [ v ] t c h [ ? c ] 0 1 0 2 0 3 0 4 0 5 0 6 0 7 0 0 2 4 6 8 1 0 1 2 1 4 q g [ n c ] t y p i c a l g a t e c h a r g e c h a r a c t e r i s t i c s vgs=f(qg):id=12a, tch=25?c v g s [ v ] 480 v 300 v v c c = 120 v 1 0 - 2 1 0 - 1 1 0 0 1 0 1 1 0 2 1 0 0 1 0 1 1 0 2 1 0 3 1 0 4 c [ p f ] v ds [ v ] ty p i c a l c a p a c it a n c e c = f ( v ds ) : v g s = 0 v , f = 1 m h z cr s s co s s c i s s 0 . 0 0 0 . 2 5 0 . 5 0 0 . 7 5 1 . 0 0 1 . 2 5 1 . 5 0 0 . 1 1 1 0 10 0 i f [ a ] v s d [ v ] t y p i c a l f o r w a r d c h a r a c t e r i s t i c s o f r e v e r s e d i od e if=f(vsd):80s pulse test, tch=25?c 1 0 - 1 1 0 0 1 0 1 1 0 2 1 0 0 1 0 1 1 0 2 1 0 3 t y p i c a l s w i t c h i n g c h a r a c t e r i s t i c s v s . i d t=f(id):vcc=300v, vgs=10v, rg=27? t d ( on ) t r t f t d ( o ff ) t [ n s ] i d [ a ]
4 FML12N60ES 5 fuji power mosfet http://www.fujisemi.com 0 2 5 5 0 7 5 10 0 12 5 15 0 0 1 0 0 2 0 0 3 0 0 4 0 0 5 0 0 6 0 0 i a s = 5 a i a s = 7 a i a s = 11 a e a v [ m j ] startingtch [?c] m a x i m u m a v a l a n c h e e n e r g y v s . s t a rt i n g t c h e ( av ) = f ( s t a rt i n g t c h ): v cc =60 v , i ( av ) <=12 a 1 0 - 6 1 0 - 5 1 0 - 4 1 0 - 3 1 0 - 2 1 0 - 1 1 0 0 1 0 - 3 1 0 - 2 1 0 - 1 1 0 0 1 0 1 t r a n s i e n t t h e r m a l i m p e d a nc e zt h ( ch-c ) = f ( t ) : d = 0 zth(ch-c)[?c//w] t [ s ec ]
4 5 fuji power mosfet FML12N60ES http://www.fujisemi.com warning 1. this catalog contains the product specifcations, characteristics, data, materials, and structures as of march 2010. the contents are subject to change without notice for specifcation changes or other reasons. when using a product listed in this catalog, be sure to obtain the latest specifcations. 2. all applications described in this catalog exemplify the use of fuji's products for your reference only. no right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by fuji electric systems co., ltd. is (or shall be deemed) granted. fuji electric systems co., ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. although fuji electric systems co., ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. when using fuji electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fre, or other problem if any of the products become faulty. it is recommended to make your design fail-safe, fame retardant, and free of malfunction. 4. the products introduced in this catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. ? computers ? oa equipment ? communications equipment (terminal devices) ? measurement equipment ? machine tools ? audiovisual equipment ? electrical home appliances ? personal equipment ? industrial robots etc. 5. if you need to use a product in this catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact fuji electric systems co., ltd. to obtain prior approval. when using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a fuji's product incorporated in the equipment becomes faulty. ? transportation equipment (mounted on cars and ships) ? trunk communications equipment ? traffc-signal control equipment ? gas leakage detectors with an auto-shut-off feature ? emergency equipment for responding to disasters and anti-burglary devices ? safety devices ? medical equipment 6. do not use products in this catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). ? space equipment ? aeronautic equipment ? nuclear control equipment ? submarine repeater equipment 7. copyright ?1996-2008 by fuji electric systems co., ltd. all rights reserved. no part of this catalog may be reproduced in any form or by any means without the express permission of fuji electric systems co., ltd. 8. if you have any question about any portion in this catalog, ask fuji electric systems co., ltd. or its sales agents before using the product. neither fuji electric systems co., ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein.
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